1N957B Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Z-Diodes

Silicon Z–Diodes
Features
D Very sharp reverse characteristic
D Very high stability
D Low reverse current level
D V_Z–tolerance ± 5%
1N957B...1N963B
Vishay Telefunken
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T_j = 25_C
Parameter
Power dissipation
Z–current
x^{Test Conditions}
T_L 75°C
Junction temperature
Storage temperature range
Type
Symbol Value Unit
P_V
500
mW
I_Z
P_V/V_Z
mA
T_j
200
°C
T_stg –65...+200 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=9.5mm (3/8”), T_L=constant
R_thJA
300
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
I_F=200mA
Type
Symbol Min Typ Max Unit
V_F
1.1 V
Rev. A3, 13-Nov-98
1 (3)