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1N5820_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 3.0AMP Schottky Barrier Rectifiers
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1N5820, 1N5821, 1N5822
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
3.0 A
20 V, 30 V, 40 V
80 A
0.475 V, 0.500 V, 0.525 V
125 °C
DO-201AD
Diode variations
Single
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Non-repetitive peak reverse voltage
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length at TL = 95 °C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
VRSM
IF(AV)
IFSM
Operating junction and storage temperature range
TJ, TSTG
1N5820
20
14
20
24
1N5821
30
21
30
36
3.0
80
- 65 to + 125
1N5822
40
28
40
48
UNIT
V
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
1N5820
Maximum instantaneous forward voltage
Maximum instantaneous forward voltage
Maximum average reverse current
at rated DC blocking voltage
3.0
9.4
TA = 25 °C
TA = 100 °C
VF (1)
VF (1)
IR (1)
0.475
0.850
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
1N5821
0.500
0.900
2.0
20
1N5822
0.525
0.950
UNIT
V
V
mA
Revision: 13-Aug-13
1
Document Number: 88526
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000