English
Language : 

1N5817_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Schottky Barrier Rectifiers
www.vishay.com
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
1.0 A
20 V, 30 V, 40 V
25 A
0.45 V, 0.55 V, 0.60 V
125 °C
DO-204AL
Diode variations
Single
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N5817
Maximum repetitive peak reverse voltage
VRRM
20
Maximum RMS voltage
VRMS
14
Maximum DC blocking voltage
VDC
20
Maximum non-repetitive peak reverse voltage
VRSM
24
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length at TL = 90 °C
IF(AV)
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
1N5818
30
21
30
36
1.0
25
10 000
- 65 to + 125
1N5819
40
28
40
48
UNIT
V
V
V
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL 1N5817
Maximum instantaneous forward voltage 1.0
VF (1)
0.450
Maximum instantaneous forward voltage 3.1
VF (1)
0.750
Maximum average reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 100 °C
IR (1)
Typical junction capacitance
4.0 V, 1.0 MHz
CJ
125
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
1N5818
1N5819
0.550
0.600
0.875
0.900
1.0
10
110
UNIT
V
V
mA
pF
Revision: 13-Aug-13
1
Document Number: 88525
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000