1N5624 Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Lead Mounted Rectifier

1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Rectification diode, general purpose
PARTS TABLE
PART
1N5624
1N5625
1N5626
1N5627
TYPE DIFFERENTIATION
V_R = 200 V; I_FAV = 3 A
V_R = 400 V; I_FAV = 3 A
V_R = 600 V; I_FAV = 3 A
V_R = 800 V; I_FAV = 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
t_p = 10 ms, half sinewave
t_p = 20 μs, half sine wave,
T_j = 175 °C
I_(BR)R = 1 A, T_j = 175 °C
1N5624
1N5625
1N5626
1N5627
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
I_FSM
I_FRM
I_FAV
P_R
E_R
i²*t-rating
i²*t
Junction and storage temperature
range
T_j = T_stg
VALUE
200
400
600
800
100
18
3
1000
20
40
- 55 to + 175
UNIT
V
V
V
V
A
A
A
W
mJ
A²*s
°C
MAXIMUM THERMAL RESISTANCE (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Junction ambient
l = 10 mm, T_L = constant
R_thJA
25
On PC board with spacing 25 mm
R_thJA
70
Document Number: 86063 For technical questions within your region, please contact one of the following:
Rev. 1.5, 21-Sep-10
[e-mail], [e-mail], [e-mail]
UNIT
K/W
K/W
www.vishay.com
1