1N5059 Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Passivated Rectifier

Silicon Mesa Rectifiers
Features
D Controlled avalanche characteristics
D Glass passivated
D Low reverse current
D High surge current loading
D Hermetically sealed axial–leaded glass
envelope
Applications
Rectifier, general purpose
1N5059...1N5062
Vishay Telefunken
94 9539
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Max. pulse energy in avalanche
mode, non repetitive
(inductive load switch off)
t_p=10ms, half–sinewave
R_thJA=45K/W, T_amb=50°C
R_thJA=100K/W, T_amb=75°C
I_(BR)R=1A, indicutive load
Type Symbol Value Unit
1N5059 V_R
200
V
1N5060 ^=VRRM
400
V
1N5061
600
V
1N5062
800
V
I_FSM
50
A
I_FAV
2
A
I_FAV
0.8
A
T_j=T_stg –55...+175 °C
E_R
20
mJ
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
lead length l = 10mm, T_L = constant
on PC board with spacing 25 mm
R_thJA
R_thJA
45
K/W
100
K/W
Document Number 86000
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack [phone]
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