1N4937-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Fast Switching Plastic Rectifier

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1N4933, 1N4934, 1N4935, 1N4936, 1N4937
Vishay General Semiconductor
Fast Switching Plastic Rectifier
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
t_rr
I_R
V_F
T_J max.
Package
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V
30 A
200 ns
5.0 μA
1.2 V
150 °C
DO-204AL (DO-41)
Diode variation
Single die
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-204AL, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 1N4933 1N4934 1N4935 1N4936 1N4937
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T_A= 75 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
50
100
200
400
600
V_RMS
35
70
145
280
420
V_DC
50
100
200
400
600
I_F(AV)
1.0
I_FSM
30
Maximum reverse recovery current
Operating junction and storage temperature range
I_RM
T_J, T_STG
2.0
- 50 to + 150
UNIT
V
V
V
A
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL 1N4933 1N4934 1N4935 1N4936 1N4937
Maximum instantaneous
forward voltage
1.0 A
V_F
1.2
Maximum DC reverse current
at rated DC blocking voltage
T_A= 25 °C
T_A= 100 °C
I_R
5.0
100
Maximum reverse recovery time
I_F = 1.0 A, V_R = 30 V,
dI/dt = 50 A/μs, I_rr = 10 % I_RM
t_rr
200
Typical junction capacitance
4.0 V, 1 MHz
C_J
12
UNIT
V
μA
ns
pF
Revision: 24-Jul-13
1
Document Number: 88508
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000