1N4454 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SIGNAL DIODE

Small-Signal Diode
DO-204AH (DO-35 Glass)
1N4454
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage 100V
Forward Current 150mA
Dimensions in inches
and (millimeters)
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm), 50K/box
F3/10K per 13” reel (52mm tape), 50K/box
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Reverse voltage
VR
75
Peak reverse voltage
VRM
100
Maximum average rectified current half wave rectification
with resistive load at Tamb = 25°C and f ≥ 50Hz⁽¹⁾
IF(AV)
150
Surge forward current at t < 1s and Tj = 25°C
Maximum power dissipation at Tamb = 25°C⁽¹⁾
Thermal resistance junction to ambient air⁽¹⁾
IFSM
500
Ptot
500
RθJA
350
Maximum junction temperature
TJ
175
Storage temperature range
TS
–65 to +175
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Maximum forward voltage drop at IF = 10mA
VF
Leakage current
at VR = 50V
at VR = 75V
IR
Reverse breakdown voltage tested with 100µA pulses
V(BR)R
Capacitance at VF = VR = 0V
Ctot
Reverse recovery time
from IF = 10mA to IR = 1mA, VR = 6V, RL = 100Ω
trr
Rectification efficiency at f = 100MHz, VRF = 2V
ηv
Note:
(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
Document Number 88110
13-May-02
Min.
–
–
100
–
–
0.45
Max.
Unit
1.0
V
100
nA
5
µA
–
V
2
pF
4
ns
–
–
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