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1N4448WS-V_12 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Small Signal Fast Switching Diode
Small Signal Fast Switching Diode
1N4448WS-V
Vishay Semiconductors
Features
• These diodes are also available in other
case styles including the DO-35 case
with the type designation 1N4448, the
MiniMELF case with the type designation
LL4448, and the SOT-23 case with the
type designation IMBD4448-V
• Silicon Epitaxial Planar Diode
• Fast switching diodes
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-323
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4448WS-V
Ordering code
1N4448WS-V-GS18 or 1N4448WS-V-GS08
20145
Type Marking
A3
Remarks
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
75
V
Peak reverse voltage
VRM
100
V
Average rectified current half
wave rectification with resistive
load
f ≥ 50 Hz
IF(AV)
150 1)
mA
Surge forward current
t < 1 s and Tj = 25 °C
IFSM
350
mA
Power dissipation
Ptot
2001)
mW
1) Valid provided that electrodes are kept at ambient temperature.
Document Number 81387 For technical questions within your region, please contact one of the following:
Rev. 1.1, 12-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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