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1N4448W-V_12 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Small Signal Fast Switching Diode
Small Signal Fast Switching Diode
1N4448W-V
Vishay Semiconductors
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
• This diode is also available in other case
styles including the DO-35 case with the
type designation 1N4448, the MiniMELF
case with the type designation LL4448,
and the SOT-23 case with the type designation
17431
IMBD4448
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4448W-V
Ordering code
1N4448W-V-GS18 or 1N4448W-V-GS08
Type Marking
A3
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge current
f ≥ 50 Hz
t < 1 s and Tj = 25 °C
Power dissipation
1) Valid provided that electrodes are kept at ambient temperature.
Symbol
VR
VRM
IF(AV)
IFSM
Ptot
Value
75
100
1501)
500
5001)
Remarks
Tape and Reel
Unit
V
V
mA
mA
mW
Document Number 85722 For technical questions within your region, please contact one of the following:
Rev. 1.4, 17-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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