1N4448W-G Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon epitaxial planar diode

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1N4448W-G
Vishay Semiconductors
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912 







PARTS TABLE
PART
ORDERING CODE
1N4448W-G
1N4448W-G3-08 or 1N4448W-G3-18
INTERNAL CONSTRUCTION TYPE MARKING
Single diode
AJ
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load ⁽¹⁾
f  50 Hz
V_R
V_RRM
I_F(AV)
Surge current
Power dissipation ⁽¹⁾
t < 1 s and T_j = 25 °C
I_FSM
P_tot
VALUE
75
100
150
500
500
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air ⁽¹⁾
R_thJA
Junction temperature
T_j
Storage temperature
T_stg
Operating temperature
T_op
Note
(1) _{Valid provided that electrodes are kept at ambient temperature.}
VALUE
350
150
- 65 to + 150
- 55 to + 150
UNIT
V
V
mA
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 1.0, 13-May-13
1
Document Number: 85409
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000