1N4150_12 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Small Signal Fast Switching Diodes

Small Signal Fast Switching Diodes
1N4150
Vishay Semiconductors
Features
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• AEC-Q101 qualified
• High forward current capability
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Applications
• High speed switch and general purpose use in
computer and industrial applications
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
1N4150
Ordering code
1N4150-TR or 1N4150-TAP
Type Marking
1N4150
Remarks
Tape and Reel/Ammopack
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
t_p = 1 µs
Average peak forward current
Forward continuous current
Average forward current
Power dissipation
V_R = 0
l = 4 mm, T_L = 45 °C
l = 4 mm, T_L ≤ 25 °C
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
l = 4 mm, T_L = constant
Storage temperature range
Symbol
V_RRM
V_R
I_FSM
I_FRM
I_F
I_FAV
P_tot
P_tot
Symbol
R_thJA
T_j
T_stg
Value
50
50
4
600
300
150
440
500
Value
350
175
- 65 to + 175
Unit
V
V
A
mA
mA
mA
mW
mW
Unit
K/W
°C
°C
Document Number 85522 For technical questions within your region, please contact one of the following:
Rev. 1.8, 20-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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