1N4150_07 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Fast Switching Diodes

Small Signal Fast Switching Diodes
1N4150
Vishay Semiconductors
Features
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• High forward current capability
e2
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• High speed switch and general purpose use in
computer and industrial applications
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
1N4150
Ordering code
1N4150-TR or 1N4150-TAP
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Average peak forward current
t_p = 1 µs
Forward continuous current
Average forward current
Power dissipation
V_R = 0
l = 4 mm, T_L = 45 °C
l = 4 mm, T_L ≤ 25 °C
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air l = 4 mm, T_L = constant
Junction temperature
Storage temperature range
Type Marking
1N4150
Symbol
V_RRM
V_R
I_FSM
I_FRM
I_F
I_FAV
P_tot
P_tot
Symbol
R_thJA
T_j
T_stg
94 9367
Remarks
Tape and Reel/Ammopack
Value
Unit
50
V
50
V
4
A
600
mA
300
mA
150
mA
440
mW
500
mW
Value
Unit
350
K/W
175
°C
- 65 to + 175
°C
Document Number 85522
Rev. 1.7, 16-Feb-07
www.vishay.com
1