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1N4150W Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES
www.vishay.com
1N4150W
Vishay Semiconductors
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• For general purpose and switching
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912 
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PARTS TABLE
PART
ORDERING CODE
1N4150W-E3-08 or 1N4150W-E3-18
1N4150W
1N4150W-HE3-08 or 1N4150W-HE3-18
TYPE MARKING
A4
INTERNAL CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Maximum average forward rectified current
Maximum power dissipation (1)
VRRM
IF(AV)
Ptot
VALUE
50
200
410
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Maximum junction temperature
Storage temperature range
Operating temperature range
RthJA
Tj
Tstg
Top
Note
(1) Valid provided that electrodes are kept at ambient temperature.
VALUE
375
150
- 65 to + 150
- 55 to + 150
UNIT
V
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 1.4, 08-May-13
1
Document Number: 85720
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000