1N4150W-V_12 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Small Signal Switching Diode

Small Signal Switching Diode
1N4150W-V
Vishay Semiconductors
Features
• Silicon Epitaxial Planar Diode
• For general purpose and switching
• This diode is also available in other case
styles including the DO-35 case with the
type designation 1N4150, and the
MiniMELF case with the type designation
LL4150.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 9.3 mg
Packaging codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4150W-V
Ordering code
1N4150W-V-GS18 or 1N4150W-V-GS08
17431
Marking
A4
Remarks
Tape and reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Peak reverse voltage
V_RM
50
V
Maximum average forward
rectified current
I_F(AV)
200
mA
Maximum power dissipation
P_tot
410¹⁾
mW
1) _{Valid provided that electrodes are kept at ambient temperature.}
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum junction temperature
Storage temperature range
Symbol
Value
Unit
T_j
150
°C
T_S
- 65 to + 150
°C
Document Number 85720 For technical questions within your region, please contact one of the following:
Rev. 1.3, 17-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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