1N4150W-V Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Switching Diode

Small Signal Switching Diode
1N4150W-V
Vishay Semiconductors
Features
• Silicon Epitaxial Planar Diode
• For general purpose and switching
e3
• This diode is also available in other case
styles including the DO-35 case with the type des-
ignation 1N4150, and the MiniMELF case with the
type designation LL4150.
17431
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4150W-V
Ordering code
1N4150W-V-GS18 or 1N4150W-V-GS08
Marking
A4
Remarks
Tape and reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Peak reverse voltage
Maximum average forward
rectified current
V_RM
50
V
I_F(AV)
200
mA
Maximum power dissipation
T_amb = 25 °C
P_tot
410¹⁾
mW
1) _{Valid provided that electrodes are kept at ambient temperature.}
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Maximum junction temperature
Storage temperature range
Test condition
Symbol
Value
Unit
T_j
150
°C
T_S
- 65 to + 150
°C
Document Number 85720
Rev. 1.2, 21-Jul-05
www.vishay.com
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