1N4148 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diodes

Silicon Epitaxial Planar Diodes
Features
D Electrically equivalent diodes: 1N4148 – 1N914
1N4448 – 1N914B
1N4148.1N4448
Vishay Telefunken
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
t_p=1ms
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
V_R=0
x ^{l=4mm, TL=45°C}
l=4mm, T_L 25°C
Storage temperature range
Type
Symbol Value
Unit
V_RRM
100
V
V_R
75
V
I_FSM
2
A
I_FRM
500
mA
I_F
300
mA
I_FAV
150
mA
P_V
440
mW
P_V
500
mW
T_j
200
°C
T_stg –65...+200 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, T_L=constant
Symbol
Value
Unit
R_thJA
350
K/W
Document Number 85521
Rev. 2, 01-Apr-99
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