1N4001GP Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 1.0 Ampere Glass Passivated Rectifiers

1N4001GP thru 1N4007GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
SUPERECTIFIER^®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
I_F(AV)
1.0 A
V_RRM
50 V to 1000 V
I_FSM (8.3 ms sine-wave)
30 A
I_FSM (square wave t_p = 1 ms)
45 A
I_R
5.0 μA
V_F
1.1 V
T_J max.
175 °C
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for both
consumer and automotive applications.
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, typical I_R less than 0.1 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Maximum repetitive peak
reverse voltage
V_RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V_RMS ⁽¹⁾
35
Maximum DC blocking voltage
V_DC ⁽¹⁾
50
Maximum average forward rectified
current 0.375" (9.5 mm) lead length
at T_A = 75 °C
I_F(AV) ⁽¹⁾
Non-repetitive peak
forward surge current
square waveform
T_A = 25 °C (fig. 3)
t_p = 1 ms
t_p = 2 ms
t_p = 5 ms
I_FSM ⁽¹⁾
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length T_A = 75 °C
I_R(AV) ⁽¹⁾
Rating for fusing (t < 8.3 ms)
I²t ⁽²⁾
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
1.0
A
45
35
A
30
30
μA
3.7
A²s
Operating junction and
storage temperature range
T_J, T_STG ⁽¹⁾
- 65 to + 175
°C
Notes
(1) _{JEDEC registered values}
(2) _{For device using on bridge rectifier application}
Document Number: 88504 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000