1N1188RA Datasheet, PDF (1/8 Pages) Vishay Siliconix – Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A

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1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay Semiconductors
Power Silicon Rectifier Diodes,
35 A, 40 A, 60 A
DO-203AB (DO-5)
PRODUCT SUMMARY
I_F(AV)
35 A, 40 A, 60 A
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military,
aerospace, and other high reliability
requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
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MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I_F(AV)
I_FSM
TEST CONDITIONS
T_C
50 Hz
60 Hz
1N1183
35 ⁽¹⁾
140 ⁽¹⁾
480
500 ⁽¹⁾
I²t
I²ïƒ–t
V_RRM
50 Hz
60 Hz
Range
1140
1040
16 100
50 to 600 ⁽¹⁾
Note
(1) _{JEDEC registered values}
1N3765
35 ⁽¹⁾
140 ⁽¹⁾
380
400 ⁽¹⁾
730
670
10 300
700 to 1000 ⁽¹⁾
1N1183A
40 ⁽¹⁾
150 ⁽¹⁾
765
800 ⁽¹⁾
2900
2650
41 000
50 to 600 ⁽¹⁾
1N2128A
60 ⁽¹⁾
140 ⁽¹⁾
860
900 ⁽¹⁾
3700
3400
52 500
50 to 600 ⁽¹⁾
UNITS
A
°C
A
A²s
A²ïƒ–s
V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
1N1183
1N1184
1N1185
1N1186
1N1187
1N1188
1N1189
1N1190
1N3765
1N3766
1N3767
1N3768
1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
1N2128A
1N2129A
1N2130A
1N2131A
1N2133A
1N2135A
1N2137A
1N2138A
V_RRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(T_J = - 65 °C TO 200 °C ⁽²⁾)
V
50 ⁽¹⁾
100 ⁽¹⁾
150 ⁽¹⁾
200 ⁽¹⁾
300 ⁽¹⁾
400 ⁽¹⁾
500 ⁽¹⁾
600 ⁽¹⁾
700 ⁽¹⁾
800 ⁽¹⁾
900 ⁽¹⁾
1000 ⁽¹⁾
V_RM, MAXIMUM DIRECT
REVERSE VOLTAGE
(T_J = - 65 °C TO 200 °C ⁽²⁾)
V
50 ⁽¹⁾
100 ⁽¹⁾
150 ⁽¹⁾
200 ⁽¹⁾
300 ⁽¹⁾
400 ⁽¹⁾
500 ⁽¹⁾
600 ⁽¹⁾
700 ⁽¹⁾
800 ⁽¹⁾
900 ⁽¹⁾
1000 ⁽¹⁾
Notes
(1) _{JEDEC registered values}
(2) _{For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C}
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
Revision: 04-Dec-12
1
Document Number: 93492
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000