19MT050XFAPBF Datasheet, PDF (1/10 Pages) Vishay Siliconix – 'Full Bridge' FREDFET MTP (Power MOSFET), 31 A

19MT050XFAPbF
Vishay Semiconductors
"Full Bridge" FREDFET MTP (Power MOSFET), 31 A
MTP
PRODUCT SUMMARY
V_DSS
R_DS(on)
I_D
Type
Package
500 V
0.25 Ω
31 A
Modules - MOSFET
MTP
FEATURES
• Low on-resistance
• High performance optimized built-in fast
recovery diodes
• Fully characterized capacitance and avalanche voltage
and current
• Al₂O₃ DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Low gate charge Q_g results in simple drive requirement
• Improved gate, avalanche and dynamic dV/dt ruggedness
• Low t_rr and soft diode reverse recovery
• Optimized for welding, UPS and SMPS applications
• Outstanding ZVS and high frequency operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current at V_GS 10 V
Pulsed drain current
Maximum power dissipation
Gate to source voltage
RMS isolation voltage
Peak diode recovery dV/dt
I_D
I_DM ⁽¹⁾
P_D
V_GS
V_ISOL
dV/dt ⁽²⁾
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
Any terminal to case, t = 1 min
Operating junction temperature range
T_J
Operating storage temperature range
T_Stg
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature}
(2) _{ISD ≤ 31 A, dI/dt ≤ 340 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C}
MAX.
31
19
124
1140
456
± 30
2500
15
- 55 to + 150
- 55 to + 125
UNITS
A
W
V
V/ns
°C
°C
Document Number: 94546 For technical questions within your region, please contact one of the following:
Revision: 12-May-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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