18TT045-F Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 18 A

18TT045-F
Vishay High Power Products
TO-220AC
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at 18 A at 125 °C
High Performance Schottky
Generation 5.0, 18 A
Base
cathode
2
1
3
Cathode Anode
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V_F vs. I_R trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
18 A
45 V
0.51 V
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
V_F
T_J
18 A_pk, T_J = 125 °C (typical)
Range
VALUES
45
0.48
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
TEST CONDITIONS
V_R
T_J = 25 °C
18TT045-F
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current I_F(AV)
50 % duty cycle at T_C = 157 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
5 µs sine or 3 µs rect. pulse
I_FSM
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
E_AS
T_J = 25 °C, I_AS = 5.5 A, L = 3.7 mH
Limited by frequency of operation and time pulse duration so that
I_AR
T_J < T_J max. I_AS at T_J max. as a function of time pulse.
See fig. 8
VALUES
18
1800
390
56
I_AS at
T_J max.
UNITS
A
mJ
A
Document Number: 94661
Revision: 01-Apr-09
For technical questions, contact: [e-mail]
www.vishay.com
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