183NQ100PBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 180 A

183NQ100PbF
Vishay High Power Products
Schottky Rectifier, 180 A
Lug terminal
anode
HALF-PAK (D-67)
Base
cathode
PRODUCT SUMMARY
I_F(AV)
V_R
180 A
100 V
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
RoHS
COMPLIANT
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The 183NQ.. high current Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
180 Apk, T_J = 125 °C
T_J
Range
VALUES
180
100
22 000
0.73
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
183NQ100PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 7
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES
50 % duty cycle at T_C = 128 °C, rectangular waveform
240
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 5.5 A, L = 1 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
22 000
2500
15
1
UNITS
A
mJ
A
Document Number: 94461
Revision: 06-May-08
For technical questions, contact: [e-mail]
www.vishay.com
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