16CTT100_11 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Generation 5.0 Schottky Rectifier, 2 x 8 A

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VS-16CTT100
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 2 x 8 A
Base ₂
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
TO-220AB
2x8A
100 V
0.58 V
4 mA at 125 °C
175 °C
Common cathode
36 mJ
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V_F vs. I_R trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
V_F
T_J
8 Apk, T_J = 125 °C (typical, per leg)
Range
VALUES
100
0.55
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V_R
TEST CONDITIONS
T_J = 25 °C
VS-16CTT100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
I_F(AV)
Maximum peak one cycle
non-repetitive surge current per leg
I_FSM
Non-repetitive avalanche energy per leg E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 163 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 1.5 A, L = 60 mH
Limited by frequency of operation and time pulse duration
so that T_J < T_J max. I_AS at T_J max. as a function of time pulse
See fig. 8
VALUES
8
16
850
210
67
I_AS at
T_J max.
UNITS
A
mJ
A
Revision: 10-Aug-11
1
Document Number: 94530
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