15TQ060SPBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 15 A

15TQ060SPbF
Vishay High Power Products
Schottky Rectifier, 15 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
15 A
60 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 µs sine
V_F
15 Apk, T_J = 125 °C
T_J
Range
FEATURES
• 150 °C T_J operation
• Very low forward voltage drop
• High frequency operation
Available
RoHS*
COMPLIANT
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
DESCRIPTION
The 15TQ060SPbF Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
VALUES
15
60
1000
0.56
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
15TQ060SPbF
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
TEST CONDITIONS
I_F(AV) 50 % duty cycle at T_C = 104 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated
I_FSM
load condition and with
10 ms sine or 6 ms rect. pulse _{rated VRRM applied}
E_AS
T_J = 25 °C, I_AS = 1.5 A, L = 11.5 mH
Current decaying linearly to zero in 1 µs
I_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
VALUES
15
1000
260
6
1.50
UNITS
A
A
mJ
A
Document Number: 94143
Revision: 26-May-08
For technical questions, contact: [e-mail]
www.vishay.com
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