15ETX06S Datasheet, PDF (1/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 15 A FRED PtTM

15ETX06S/15ETX06-1
Vishay High Power Products
15ETX06S
Base
Cathode
2
1
3
N/C
Anode
D²PAK
PRODUCT SUMMARY
t_rr
I_F(AV)
V_R
Hyperfast Rectifier,
15 A FRED Pt^TM
15ETX06-1
2
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified for industrial level
1
N/C
3
Anode
TO-262
18 ns
15 A
600 V
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
V_RRM
Average rectified forward current
Non-repetitive peak surge current
I_F(AV)
I_FSM
Peak repetitive forward current
I_FM
Operating junction and storage temperatures T_J, T_Stg
TEST CONDITIONS
T_C = 133 °C
T_J = 25 °C
MAX.
600
15
170
30
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 µA
600
I_F = 15 A
-
Forward voltage
V_F
I_F = 15 A, T_J = 150 °C
-
V_R = V_R rated
-
Reverse leakage current
I_R
T_J = 150 °C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 600 V
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
2.3
1.5
0.1
40
20
8.0
MAX.
-
3.2
1.8
50
300
-
-
UNITS
V
µA
pF
nH
Document Number: 93928
Revision: 08-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
1