1487287 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si2307BDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.078 at V_GS = - 10 V
0.130 at V_GS = - 4.5 V
I_D (A)^b
- 3.2
- 2.5
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
RoHS
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2307BDS (L7)*
* Marking Code
Ordering Information: Si2307BDS-T1-E3 (Lead (Pb)-free)
Si2307BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^b
Pulsed Drain Current^a
T_A = 25 °C
T_A = 70 °C
I_D
- 3.2
- 2.6
- 2.5
- 2.0
A
I_DM
- 12
Continuous Source Current (Diode Conduction)^b
I_S
- 1.25
- 0.75
Power Dissipation^b
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.75
0.8
0.48
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Ambient^c
Symbol
R_thJA
Typical
80
130
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Maximum
100
166
Unit
°C/W
Document Number: 72699
S-80427-Rev. C, 03-Mar-08
www.vishay.com
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