12TQS Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 15 A

12TQ...S
Vishay High Power Products
Schottky Rectifier, 15 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
15 A
35 to 45 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
Range
I_FSM
t_p = 5 µs sine
V_F
15 Apk, T_J = 125 °C
T_J
Range
FEATURES
• 150 °C T_J operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
DESCRIPTION
The 12TQ...S Schottky rectifier series has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
VALUES
15
35 to 45
990
0.50
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
12TQ035S
35
12TQ040S
40
12TQ045S
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
See fig. 5
I_F(AV) 50 % duty cycle at T_C = 120 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 µs sine or 3 µs rect. pulse
Following any rated
I_FSM
load condition and with
10 ms sine or 6 ms rect. pulse _{rated VRRM applied}
Non-repetitive avalanche energy
Repetitive avalanche current
E_AS
T_J = 25 °C, I_AS = 2.4 A, L = 5.5 mH
Current decaying linearly to zero in 1 µs
I_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
15
990
250
16
2.4
UNITS
A
A
mJ
A
Document Number: 93946
Revision: 25-Jun-08
For technical questions, contact: [e-mail]
www.vishay.com
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