10TTS08SPBF_10 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Surface Mountable Phase Control SCR, 10 A

VS-10TTS08SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable Phase Control SCR, 10 A
2
Anode
D²PAK
13
Cathode Gate
PRODUCT SUMMARY
V_T at 6.5 A
I_TSM
V_RRM
< 1.15 V
140 A
800 V
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-10TTS08SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
2.5
with 4 oz. (140 μm) copper
Aluminum IMS, R_thCA = 15 °C/W
6.3
Aluminum IMS with heatsink, R_thCA = 5 °C/W
14.0
Note
• T_A = 55 °C, T_J = 125 °C, footprint 300 mm²
THREE-PHASE BRIDGE
3.5
9.5
18.5
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_RMS
V_RRM/V_DRM
I_TSM
V_T
dV/dt
Sinusoidal waveform
6.5 A, T_J = 25 °C
dI/dt
T_J
Range
VALUES
6.5
10
800
140
1.15
150
100
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-10TTS08SPbF
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
Document Number: 94562 For technical questions within your region, please contact one of the following:
Revision: 08-Jun-10
[e-mail], [e-mail], [e-mail]
I_RRM/I_DRM
AT 125 °C
mA
1.0
www.vishay.com
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