10TQSPBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 10 A

10TQ...SPbF
Vishay High Power Products
Schottky Rectifier, 10 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
10 A
35/45 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 µs sine
V_F
10 Apk, T_J = 125 °C
T_J
Range
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
Available
RoHS*
COMPLIANT
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
DESCRIPTION
The 10TQ...SPbF Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 175 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
VALUES
10
35/45
1050
0.49
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
10TQ035SPbF
35
10TQ045SPbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
TEST CONDITIONS
I_F(AV) 50 % duty cycle at T_C = 151 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated
I_FSM
load condition and with
10 ms sine or 6 ms rect. pulse _{rated VRRM applied}
E_AS
T_J = 25 °C, I_AS = 2 A, L = 6.5 mH
Current decaying linearly to zero in 1 µs
I_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
VALUES
10
1050
280
13
2
UNITS
A
A
mJ
A
Document Number: 94121
Revision: 26-May-08
For technical questions, contact: [e-mail]
www.vishay.com
1