10TQS Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 10 A

10TQ...S
Vishay High Power Products
Schottky Rectifier, 10 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
10 A
35/45 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
10 Apk, T_J = 125 °C
T_J
Range
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
DESCRIPTION
The 10TQ...S Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
VALUES
10
35/45
1050
0.49
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
10TQ035S
35
10TQ045S
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
See fig. 5
I_F(AV) 50 % duty cycle at T_C = 151 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 µs sine or 3 µs rect. pulse
Following any rated
I_FSM
load condition and with
10 ms sine or 6 ms rect. pulse _{rated VRRM applied}
Non-repetitive avalanche energy
Repetitive avalanche current
E_AS
T_J = 25 °C, I_AS = 2 A, L = 6.5 mH
Current decaying linearly to zero in 1 µs
I_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
10
1050
280
13
2
UNITS
A
A
mJ
A
Document Number: 93943
Revision: 25-Jun-08
For technical questions, contact: [e-mail]
www.vishay.com
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