10ETSS Datasheet, PDF (1/6 Pages) Vishay Siliconix – This product series has been designed and qualified for industrial level

10ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
Base cathode
2
D²PAK
1
Anode
3
Anode
PRODUCT SUMMARY
V_F at 10 A
I_FSM
V_RRM
<1V
200 A
800/1200 V
DESCRIPTION/FEATURES
The 10ETS..S rectifier series has been optimized for very
low forward voltage drop, with moderate leakage. The glass
passivation technology used has reliable operation up to
150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product series has been designed and qualified for
industrial level.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C
12.0
common heatsink of 1 °C/W
THREE-PHASE BRIDGE
16.0
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Sinusoidal waveform
10 A, T_J = 25 °C
VALUES
10
800/1200
200
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
10ETS08S
10ETS10S
10ETS12S
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
I_RRM
AT 150 °C
mA
0.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I²t for fusing
Maximum I²âˆšt for fusing
SYMBOL
I_F(AV)
I_FSM
I²t
I²âˆšt
TEST CONDITIONS
T_C = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
10
170
200
130
145
1450
UNITS
A
A²s
A²âˆšs
Document Number: 93486
Revision: 26-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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