10ETS08PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Input Rectifier Diode, 10 A

10ETS08PbF, 10ETS12PbF High Voltage Series
Vishay Semiconductors
Input Rectifier Diode, 10 A
Base
cathode
2
TO-220AC
PRODUCT SUMMARY
V_F at 10 A
I_FSM
V_RRM
1
3
Cathode Anode
< 1.1 V
200 A
800 V/1200 V
FEATURES
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
The 10ETS..PbF rectifier series has been optimized for very
low forward voltage drop, with moderate leakage.
The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C
12.0
common heatsink of 1 °C/W
THREE-PHASE BRIDGE
16.0
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Sinusoidal waveform
10 A, T_J = 25 °C
VALUES
10
800/1200
200
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
10ETS08PbF
10ETS12PbF
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I_RRM
AT 150 °C
mA
0.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
I²ïƒ–t
TEST CONDITIONS
T_C = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
170
200
130
145
1450
UNITS
A
A²s
A²ïƒ–s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94337 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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