10ETF02SPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 10 A

VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 10 A
Base
common
cathode
+
2
D²PAK (SMD-220)
1
Anode -
3
- Anode
PRODUCT SUMMARY
V_RRM
V_F at 10 A
t_rr
200 V to 600 V
< 1.2 V
50 ns
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
I_F(AV)
Sinusoidal waveform
I_FSM
t_rr
1 A, 100 A/μs
V_F
10 A, T_J = 25 °C
T_J
Range
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-10ETF..SPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
VALUES
200 to 600
10
150
50
1.2
- 40 to 150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF02SPbF
VS-10ETF04SPbF
VS-10ETF06SPbF
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
I_RRM
AT 150 °C
mA
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
I²âˆšt
TEST CONDITIONS
T_C = 128 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
150
160
112.5
160
1125
UNITS
A
A²s
A²âˆšs
Document Number: 94091
Revision: 26-Apr-10
For technical questions, contact: [e-mail]
www.vishay.com
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