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| V23990-P866-F49-PM Datasheet, PDF (8/15 Pages) Vincotech – 2 clip housing in 12mm and 17mm height | |||
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Output Inverter
V23990-P866-F49/F48-PM
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
10000
8000
Output inverter FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
15000
12000
Output inverter FWD
dI0/dt
dIrec/dt
6000
9000
4000
6000
2000
0
0
30
60
Tj =
VCE =
VGE =
Rgon =
25/150 °C
300
V
±15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
dI0/dt
dIrec/dt
90
120
I C (A) 150
3000
0
0
4
8
Tj =
VR =
IF =
VGE =
25/150 °C
300
V
75
A
±15
V
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
12
16
R gon ( â¦) 20
Output inverter FWD
100
100
D = 0,5
0,2
10-1
0,1
10-1
0,05
0,02
0,01
0,005
0.000
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
10-1
100
t p (s) 10110
D=
RthJH =
tp / T
1,06
K/W
IGBT thermal model values
D=
RthJH =
tp / T
1,43
K/W
FWD thermal model values
R (C/W)
0,02
0,15
0,53
0,24
0,07
0,04
Tau (s)
9,5E+00
1,1E+00
1,7E-01
4,1E-02
6,9E-03
4,2E-04
R (C/W)
0,03
0,16
0,63
0,41
0,12
0,08
Tau (s)
9,1E+00
1,0E+00
1,5E-01
4,0E-02
6,7E-03
4,6E-04
Copyright by Vincotech
8
Revision: 2
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