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| V23990-P828-F10-P2-14 Datasheet, PDF (8/16 Pages) Vincotech – Trench Fieldstop IGBT4 Technology | |||
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Output Inverter
V23990-P828-F10-PM
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
3500
dI0/dt
dIrec/dt
3000
2500
2000
1500
1000
500
0
0
15
30
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
16
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output inverter FRED
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
12000
10000
Output inverter FRED
dI0/dt
dIrec/dt
8000
6000
4000
2000
45
60
I C (A) 75
0
0
16
32
48
64 R Gon ( Ω) 80
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
35
A
±15
V
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output inverter FRED
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,18
K/W
IGBT thermal model values
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,52
K/W
FRED thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
R (C/W)
0,07
0,25
0,56
0,21
0,05
0,04
Tau (s)
3,9E+00
5,9E-01
1,3E-01
1,8E-02
2,0E-03
3,1E-04
R (C/W)
0,05
0,19
0,67
0,34
0,18
0,10
Tau (s)
9,6E+00
1,0E+00
1,6E-01
3,4E-02
6,6E-03
6,1E-04
copyright by Vincotech
8
Revision: 2
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