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| V23990-P823-F-PM Datasheet, PDF (8/16 Pages) Vincotech – Compact and Low Inductance Design | |||
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Output Inverter
V23990-P823-F-PM
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
6000
dI0/dt
dIrec/dt
5000
4000
3000
2000
1000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
300
V
±15
V
8
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
12000
10000
Output inverter FRED
dI0/dt
dIrec/dt
8000
6000
4000
2000
60
80
I C (A) 100
0
0
8
16
24
32 R Gon ( Ω) 40
At
Tj =
VR =
IF =
VGE =
25/150 °C
300
V
50
A
±15
V
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,68
K/W
IGBT thermal model values
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,87
K/W
FRED thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
R (C/W)
0,02
0,08
0,18
0,26
0,08
0,06
Tau (s)
9,9E+00
1,2E+00
1,5E-01
4,2E-02
4,6E-03
5,2E-04
R (C/W)
0,02
0,08
0,15
0,35
0,15
0,11
Tau (s)
9,5E+00
1,1E+00
1,4E-01
3,2E-02
4,1E-03
5,0E-04
copyright by Vincotech
8
Revision: 2
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