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| V23990-K220-A41-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology | |||
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V23990-K220-A41-PM
Inverter\Brake Characteristics
Figure 17
Inverter Diode\Brake Diode
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
1500
dI0/dt
1200
dIrec/dt
dIo/dtLow T
900
600
300
dIrec/dtHigh T
dIrec/dtLow T
0
0
15
30
45
At
Tj =
V CE =
V GE =
R gon =
25/150 °C
600
V
±15
V
16
â¦
di0/dtHigh T
60
I C (A) 75
Figure 18
Inverter Diode\Brake Diode
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
6000
dI0/dt
5000
dIrec/dt
4000
3000
2000
1000
Tj = Tjmax - 25°C
Tj = 25°C
dIrec/dtHigh T
0
0
15
30
45
At
Tj =
VR =
IF =
V GE =
25/150 °C
600
V
35
A
±15
V
60 R gon ( ⦠) 75
Figure 19
Inverter Switch\Brake Switch
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
Figure 20
Inverter Diode\Brake Diode
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
R thJH =
tp / T
0,99
K/W
IGBT thermal model values
R (K/W)
0,10
0,31
0,41
0,13
0,03
Tau (s)
1,5E+00
2,7E-01
8,9E-02
1,4E-02
2,8E-03
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
R thJH =
tp / T
1,23
K/W
FWD thermal model values
R (K/W)
0,08
0,33
0,50
0,22
0,10
Tau (s)
2,1E+00
2,4E-01
6,6E-02
1,3E-02
2,3E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
8
26 Feb. 2016 / Revision 4
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