V23990-P632-A-P1-14 Datasheet, PDF (7/18 Pages) Vincotech – IGBT FRED

flow 90PIM 1 600V/10A
V23990-P632-A-PM
preliminary data sheet
V23990-P632-A-02-14
Output inverter
Figure 9.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FRED diode
trr = f (Rgon)
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
IRRM = f (Rgon)
0,5
12
0,4
9
0,3
6
0,2
3
0,1
0
0
50
100
150
200
250R Gon ( : )300
Tj =
VR =
IF=
VGE=
125 °C
300 V
10 A
15 V
0
0
50
100
150
200
250R Gon ( : )300
Tj =
VR =
IF=
VGE=
125 °C
300 V
10 A
15 V
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Qrr = f (Rgon)
1
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
dI0/dt,dIrec/dt= f (Rgon)
1200
0,8
0,6
0,4
0,2
0
0
50
100
150
200
250R Gon ( :)300
Tj =
VR =
IF=
VGE=
125 °C
300 V
10 A
15 V
900
dI0/dt
600
300
dIrec/dt
0
0
50
100
150
200
250R Gon ( :)300
Tj =
VR =
IF=
VGE=
125 °C
300 V
10 A
15 V
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Finsinger Feld 1, D-85521 Ottobrunn
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