V23990-K204-A-PM Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology

V23990-K204-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2,5
T_j = T_jmax -25°C
2
FWD
Q_rr
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
2
T_j = T_jmax -25°C
1,6
FWD
Q_rr
1,5
1,2
Q_rr
T_j = 25°C
T_j = 25°C
Q_rr
1
0,8
0,5
0,4
0
At ⁰
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
15
V
32
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
15
T_j = T_jmax -25°C
12
T_j = 25°C
9
6
30
I C (A) 40
0
0
At
T_j =
V_R =
I_F =
V_GE =
25
50
25/125 °C
300
V
20
A
15
V
75
100
125 R g on ( Ω) 150
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
15
FWD
12
I_RRM
9
I_RRM
6
T_j = T_jmax - 25°C
T_j = 25°C
I_RRM
I_RRM
3
3
0
0
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
15
V
32
Ω
30
I C (A) 40
0
0
25
50
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
20
A
15
V
75
100
125 R gon ( Ω ) 150
copyright Vincotech
7
Revision: 3