80-M006PNB010SA-K615C Datasheet, PDF (7/17 Pages) Vincotech – Solderless interconnection

80-M006PNB010SA-K615C ; 80-M006PNB010SA01-K615D
preliminary datasheet
Output Inverter
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2,5
2,0
Output inverter FWD
Q_rr
1,5
Q_rr
1,0
T_j = T_jmax -25°C
0,5
0,0
At ⁰
T_j =
V_CE =
V_GE =
R_gon =
T_j = 25°C
2
4
6
8
10
12
14
16 I C (1A8)
20
25/150 °C
300
V
±15
V
32
Ω
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
2,0
T_j = T_jmax -25°C
1,6
1,2
Output inverter FWD
Q_rr
0,8
Q_rr
T_j = 25°C
0,4
0,0
0
32
64
96
128 R g on ( Ω) 160
T_j =
V_R =
I_F =
V_GE =
25/150 °C
300
V
10
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
12
10
T_j = T_jmax -25°C
8
6
T_j = 25°C
4
Output inverter FWD
I_RRM
I_RRM
2
0
0
2
4
6
8
10
12
14
16 I C (1A8)
20
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
300
V
±15
V
32
Ω
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
25
20
T_j = T_jmax - 25°C
15
10
T_j = 25°C
5
0
0
32
64
96
T_j =
V_R =
I_F =
V_GE =
25/150 °C
300
V
10
A
±15
V
Output inverter FWD
I_RRM
I_RRM
128 R gon ( Ω ) 160
copyright Vincotech
7
Revision: 1