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| 10-FY07ZAB075SM-L515B08 Datasheet, PDF (7/11 Pages) Vincotech – High integration level of Rectifier, PFC and Inverter | |||
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10-FY07ZAB075SM-L515B08
target datasheet
H-Bridge Switch Lo/Hi Side
Parameter
Symbol
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Gate c harge
V GE(th) V GE=V CE
V CEsat
I CES
I GES
rg
C ies
C oes f=1 MHz
C res
Qg
Conditions
Value
V GE [V] V CE [V] I C [A] T j[ °C] Min Typ Max
Unit
25
0,00075
125
25
15
75
125
150
25
0
650
125
25
20
0
125
0
25
25
15
520
75
25
3,3
4
4,7
V
1,67
2,22
1,84
V
1,89
40
µA
120
nA
none
â¦
4300
75
pF
16
166
nC
Thermal
Thermal resistance junc tion to sink
ph a s e -cha ng e
R th(j-s) material
Ê=3,4W /mK
1,14
K/W
H-Bridge Diode Lo/Hi Side
Parameter
Symbol
Static
Forward voltage
Reverse leakage c urrent
Thermal
Thermal resistance junc tion to sink
VF
Ir
R th(j-s)
phase-c hange
material
Ê=3,4W/mK
Conditions
Value
Unit
V r [V] I F [A] T j [°C] Min Typ Max
25
75
125
150
25
650
150
1,46
1,82
1,42
V
1,40
0,9
µA
1,22
K/W
Copyright Vincotech
7
26 Aug. 2015 / Revision 1
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