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| 10-FY07ZAB050SM-L514B08 Datasheet, PDF (7/11 Pages) Vincotech – High integration level of Rectifier, PFC and Inverter | |||
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10-FY07ZAB050SM-L514B08
target datasheet
H-Bridge Switch Lo/Hi Side
Parameter
Symbol
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Gate c harge
V GE(th) V GE=V CE
V CEsat
I CES
I GES
rg
C ies
C oes f=1 MHz
C res
Qg
Conditions
Value
V GE [V] V CE [V] I C [A] T j[ °C] Min Typ Max
Unit
25
0,0005
125
25
15
50
125
150
25
0
650
125
25
20
0
125
0
25
25
15
520
50
25
3,3
4
4,7
V
1
1,82
2,22
2,00
V
40
µA
120
nA
none
â¦
3000
50
pF
11
120
nC
Thermal
Thermal resistance junc tion to sink
ph a s e -cha ng e
R th(j-s) material
Ê=3,4W /mK
1,13
K/W
H-Bridge Diode Lo/Hi Side
Parameter
Static
Forward voltage
Reverse leakage current
Thermal
Symbol
dIF/dt [A/us]
Conditions
Vr [V] IF [A] Tj
25°C
VF
50
125°C
150°C
25°C
Irm
650
150°C
Thermal resistance chip to heatsink
RthJH
Phase-Change
Material λ=3,4W/mK
Value
Min Typ Max
1,55
1,82
1,50
1,45
0,6
1,48
Unit
V
µA
K/W
Copyright Vincotech
7
14 Aug. 2015 / Revision 1
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