10-FY07ZAA015SM-L512B28 Datasheet, PDF (7/11 Pages) Vincotech – High integration level of Rectifier, PFC and Inverter

10-FY07ZAA015SM-L512B28
target datasheet
H-Bridge Switch Lo/Hi Side
Parameter
Symbol
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter cut-off c urrent
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer c apac itanc e
Gate c harge
V _GE(th) V GE=V CE
V _CEsat
I _CES
I _GES
rg
C _ies
C _oes f=1MHz
C _res
Q_g
Conditions
V _GE [V] V _CE [V] I _C [A] T _j[ °C] Min
Value
Typ Max
Unit
25
0,0004
125
25
15
15
125
150
25
0
650
125
25
20
0
125
0
25
25
15
520
15
25
3,3
4
4,7
V
1,64
2,22
1,77
V
1,80
40
µA
120
nA
none
Ω
930
24
pF
4
38
nC
Thermal
Thermal resistanc e junction to sink
P h a s e -C ha n ge
R _th(j-s) Material
ʎ=3,4W /mK
H-Bridge Diode Lo/Hi Side
Parameter
Symbol
Static
Forward voltage
Reverse leakage current
Thermal
Thermal resistanc e junction to sink
VF
Ir
R th(j-s)
phase-c hange
material
ʎ=3,4W/mK
2,14
K/W
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
25
10
125
150
25
650
150
1,60
2,22
V
0,64
µA
3,27
K/W
Copyright Vincotech
7
17 Aug. 2015 / Revision 1