V23990-P722-F64-D1-14 Datasheet, PDF (6/12 Pages) Vincotech – fastPACK 0 H 2nd gen

V23990-P722-F64-PM
fastPACK0 H 2nd gen
Output inverter
Figure 9. Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter MOSFET FRED diode
trr = f (Rgon)
0,3
V23990-P722-F64
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter MOSFET FRED diode
IRRM = f (Rgon)
150
0,25
125
0,2
100
0,15
75
0,1
50
0,05
25
0
0
15
30
45
60 R Gon ( : ) 75
Tj =
VR =
IF=
VGS=
125 °C
400 V
30 A
10 V
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter MOSFET FRED diode
Qrr = f (Rgon)
10
8
6
4
2
0
0
15
30
45
Tj =
VR =
IF=
VGS=
125 °C
400 V
30 A
10 V
60 R Gon ( :) 75
0
0
15
30
45
60 R Gon ( : ) 75
Tj =
VR =
IF=
VGS=
125 °C
400 V
30 A
10 V
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter MOSFET FRED diode
dI0/dt,dIrec/dt= f (Rgon)
8000
7000
6000
5000
4000
dIrec/dt
3000
2000
dI0/dt
1000
0
0
15
30
45
Tj =
VR =
IF=
VGS=
125 °C
400 V
30 A
10 V
60 R Gon ( :) 75
Copyright by Vincotech
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