V23990-P623-F24-P2-14 Datasheet, PDF (6/14 Pages) Vincotech – fast PACK 0 H 2nd gen

Output inverter
Figure 9.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FRED diode
trr = f (Rgon)
0,3
0,25
0,2
0,15
0,1
0,05
0
0
8
16
24
32 R Gon ( : ) 40
Tj =
VR =
IF=
VGE=
125 °C
300 V
50 A
±15 V
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Qrr = f (Rgon)
4,5
4
3,5
3
2,5
2
1,5
1
0,5
0
0
8
16
24
32 R Gon ( :) 40
Tj =
VR =
IF=
VGE=
125 °C
300 V
50 A
±15 V
V23990-P623-F24-PM
preliminary datasheet
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
IRRM = f (Rgon)
125
100
75
50
25
0
0
8
16
24
32 R Gon ( : ) 40
Tj = 125 °C
VR = 300 V
IF= 50 A
VGE= ±15 V
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
dI0/dt,dIrec/dt= f (Rgon)
6600
6000
5400
4800
4200
3600
3000
dIrec/dt
2400
dI0/dt
1800
1200
600
0
0
8
16
24
32 R Gon ( :) 40
Tj =
VR =
IF=
VGE=
125 °C
300 V
50 A
±15 V
Copyright by Vincotech
6
Revision: 2