V23990-P590-J09-PM Datasheet, PDF (6/23 Pages) Vincotech – 1 or 3 phase rectifier (optional half controlled)

V23990-P590-J09-PM / V23990-P590-J19-PM /
V23990-P600-I09-PM / V23990-P600-I19-PM
datasheet
Rectifier Thyristor
Parameter
Static
Forward voltage
Threshold voltage (for power loss c alc. only)
Slope resistance (for power loss calc . only)
Reverse c urrent
Gate c ontrolled delay time
Gate c ontrolled rise time
Critic al rate of rise of off-state voltage
Critic al rate of rise of on-state c urrent
Circuit c ommutated turn-off time
Holding c urrent
Latc hing current
Gate trigger voltage
Gate trigger c urrent
Gate non-trigger voltage
Gate non-trigger current
Thermal
Thermal resistance chip to sink
Symbol
dIF/dt
[A/us]
VF
V _to
r_t
I_r
t _GD Tvj=25°C IG=1A
dig/dt=1A/μs
t _GR
VD=0,67*VDRM
(dv/dt)cr
(di/dt)cr
t_q
I_H
I_L
V _GT
I _GT
V _GD
I _GD
R th(j-s)
phase- c hange
material
ʎ=3,4W/mK
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
110
1600
1072
1072
25
1,09
1,2
V
125
1,02
25
130
0,85
V
25
130
3,2
mΩ
25
130
0,2
mA
25
1
130
µs
25
2
µs
130
25
130
1000
V/µs
25
130
100
A/µs
25
µs
130
150
25
220
mA
130
25
130
550
mA
25
1,98
V
130
25
100
mA
130
25
130
0,25
V
25
115
6
mA
0,35
K/W
Rectifier Diode
Parameter
Static
Forward voltage
Reverse leakage c urrent
Symbol
VF
Ir
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
25
77
125
150
25
1600
150
1,03
1,21
1,12
V
-
50
µA
1100
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-c hange
material
ʎ=3,4W/mK
0,50
K/W
Copyright Vincotech
6
14 Aug. 2015 / Revision 2