FZ06BIA083FI Datasheet, PDF (6/25 Pages) Vincotech – Ultra fast switching frequency

Boost and Buck
FZ06BIA083FI
preliminary datasheet
Figure 4
Typical switching energy losses
as a function of collector current
E = f(I_C)
0,10
MOSFET
Figure 5
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
3,00
2,50
0,08
E_{off High T}
2,00
0,06
1,50
0,04
E_{off Low T}
1,00
0,02
0,50
0,00
0
5
10
15
20
25 ^I C ^(A) 30
0,00
0
15
30
45
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
400
V
10
V
16
Ω
4
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
400
V
10
V
15
A
Figure 6
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,300
FRED
Figure 7
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,300
0,250
0,200
0,150
E_{rec High T}
0,250
E_{rec High T}
0,200
0,150
0,100
0,050
E_{rec Low T}
0,100
0,050
0,000
0
5
10
15
20
25 I C (A) 30
0,000
0
15
30
45
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
10
V
R_gon =
16
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
10
V
I_C =
15
A
MOSFET
E_{on High T}
E_{on Low T}
60 R G (W) 75
FRED
E_{rec Low T}
60 R G (W) 75
Copyright by Vincotech
6
Revision: 5