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V23990-P764-A-D3-14 Datasheet, PDF (5/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC
V23990-P764-A-PM
Parameter
Brake IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Brake Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Brake FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
VGE(th) VCE=VGE
0,0008
Tj=25°C
Tj=150°C
VCE(sat)
15
50
Tj=25°C
Tj=150°C
ICES
0
600
Tj=25°C
Tj=150°C
IGES
20
0
Tj=25°C
Tj=150°C
Rgint
td(on)
tr
td(off) Rgoff=8 Ω
±15
300
50
tf
Rgon=8 Ω
Eon
Eoff
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Cies
Coss f=1MHz
0
25
Tj=25°C
Crss
QGate
±15
480
50
Tj=25°C
RthJH
RthJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
Value
Unit
Min
Typ
Max
5
5,8
6,5
V
1,58
2,1
1,82
V
0,5
mA
700
nA
none
100
102
14
18,6
158
185
108
125
0,43
0,63
1,42
1,97
3140
Ω
ns
mWs
200
pF
90
310
nC
0,8
K/W
0,53
VF
RthJH
RthJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
10
Tj=25°C
1,2
1,78
2,1
Tj=150°C
1,77
V
1,81
K/W
1,19
K/W
VF
20
Ir
±15
300
50
IRRM
trr
Qrr Rgon=8 Ω
±15
300
50
di(rec)max
/dt
Erec
RthJH
RthJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,65
2,1
1,56
V
140
µA
40
47
22
141
1
2,37
6000
3416
0,35
0,58
A
ns
µC
A/µs
mWs
1,85
K/W
1,22
R25 Tol. ±5%
DR/R R100=1486.1Ω
P
B(25/100) Tol. ±3%
Tj=25°C
20,9
22
23,1
kΩ
Tc=100°C
2,9
%/K
Tj=25°C
210
mW
Tj=25°C
4000
K
copyright Vincotech
5
Revision: 3