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| V23990-P640-G10-PM Datasheet, PDF (5/16 Pages) Vincotech – Optionally with brake chopper | |||
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Parameter
Transistor BRC
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
BRC inverse diode
Diode forward voltage
Reverse leakage current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
VGE(V) or
VGS(V)
Vr(V) or
VCE(V) or
VDS(V)
IC(A) or IF(A)
or ID(A)
T(°C)
V23990-P640-G10/H10-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
Rgon=32Ohm
15
tf
Rgoff=16Ohm
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
15
RthJH
RthJC
Thermal grease
thickness â¤50um λ=
0.61W/mK
1200
0
600
25
960
0,0015
35
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
35
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
35
Tj=25°C
5
5,8
6,5
V
1,3
1,69
2,2
1,88
V
0,25
mA
650
nA
6
â¦
ns
65
26
ns
ns
673
171
ns
mWs
3,34
mWs
3,99
2,53
nF
0,132
nF
0,115
nF
203
nC
1,08
K/W
n.A.
K/W
VF
Ir
RthJH
RthJC
Thermal grease
thickness â¤50um λ=
0.61W/mK
3
1200
Tj=25°C
Tj=125°C
1
1,61
2,3
1,56
V
Tj=25°C
Tj=125°C
250
uA
3,62
K/W
n.A.
K/W
Copyright by Vincotech
5
Revision: 1
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