10-PZ07NIA075S5-P926F53Y Datasheet, PDF (5/9 Pages) Vincotech – High efficient with latest chip technology

10-PZ07NIA075S5-P926F53Y
target datasheet
Parameter
Boost Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Reverse transfer capacitance
Thermal
Thermal resistance junction to sink
Boost Diode
Static
Forward voltage
Reverse leakage current
Characteristic Values
Symbol
Conditions
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Value
Typ
Max
Unit
VGE(th) VGE = VCE
VCEsat
ICES
IGES
rg
Cies
f = 1 MHz
Cres
0,001 25
4,2
5
5,8
V
15
75
25
1,05
1,45
V
0
650
25
40
µA
20
0
25
100
nA
none
Ω
0
25
25
11625
pF
30
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
0,96
K/W
25
1,35
1,77
VF
50
125
1,32
V
150
1,28
Ir
650
25
2,65
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
Boost Sw. Protection Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
25
50
125
650
25
1,48
K/W
1,63
1,9
1,54
V
27
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,36
K/W
Copyright Vincotech
5
25 Apr. 2016 / Revision 1