10-F007NIA030SM01-P965F49 Datasheet, PDF (5/9 Pages) Vincotech – Neutral Point clamped inverter

10-F007NIA030SM01-P965F49
target datasheet
Parameter
Boost Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal
Thermal resistance junction to sink
Boost Diode
Static
Forward voltage
Reverse leakage current
Characteristic Values
Symbol
Conditions
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Value
Typ
Max
Unit
VGE(th) VGE = VCE
VCEsat
ICES
IGES
rg
Cies
Coes f = 1 MHz
Cres
Qg
0,00043 25
25
15
30
125
150
0
600
25
20
0
25
0
25
25
15
480
30
25
5
5,8
6,5
V
1,1
1,51
1,9
1,71
V
1,78
1,6
µA
300
nA
none
Ω
1630
108
pF
50
167
nC
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,71
K/W
25
1,67
1,87
VF
10
125
1,56
V
Ir
650
25
0,14
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
Boost Sw. Protection Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
25
10
150
600
25
2,87
K/W
1,60
1,95
V
1,56
27
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
2,87
K/W
Copyright Vincotech
5
17 Jun. 2016 / Revision 1